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Advanced Technical Information
PolarTM HiPerFET Power MOSFET
Electrically Isolated Tab
IXTR 200N10P
VDSS ID25
RDS(on)
= 100 V = 133 A = 8 m
N-Channel Enhancement Mode Fast Recovery Diode, Avavanche Rated
Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL FC Weight
Test Conditions TJ = 25C to 175C TJ = 25C to 175C; RGS = 1 M
Maximum Ratings 100 100 20 30 V V V V A A A A mJ J V/ns W C C C V~ Nm/lb g
ISOPLUS 247TM E153432
TC = 25C External lead current limit TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 4 TC = 25C
133 75 400 60 100 4 10 350 -55 ... +175 175 -55 ... +150
G = Gate S = Source
D = Drain
Features Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low drain to tab capacitance(<30pF) Avalanche voltage rated Fast recovery intrinsic diode Applications DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control
50/60 Hz, RMS, 1 minute Mounting Force
2500 20..120/4.6..20 5
Symbol Test Conditions (TJ = 25C, unless otherwise specified) VDSS VGS(th) IGSS IDSS VGS = 0 V, ID = 250 A VDS = VGS, ID = 500A VGS = 30 VDC, VDS = 0 VDS = VDSS VGS = 0 V VGS = 0 V VGS = 10 V, ID = 60 A VGS = 15 V, ID = 400A TJ = 150C TJ = 175C
Characteristic Values Min. Typ. Max. 100 3.0 5.0 100 25 250 1000 8.0 5.5 V V nA A A A m m
Advantages Easy assembly Space savings High power density
RDS(on)
(c) 2005 IXYS All rights reserved
DS99365(06/05)
IXTR 200N10P
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. 60 97 7600 VGS = 0 V, VDS = 25 V, f = 1 MHz 2900 860 30 VGS = 10 V, VDS = 0.5 VDSS, ID = 60 A RG = 3.3 (External) 35 150 90 240 VGS= 10 V, VDS = 0.5 VDSS, ID = 100 A 50 135 S pF pF pF ns ns ns ns nC nC nC .42 K/W 0.15 K/W
Dim. A A1 A2 b b1 b2 C D E e L L1 Q R 1 Gate, 2 Drain (Collector) 3 Source (Emitter) 4 no connection Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 .244 .170 .190
ISOPLUS 247 OUTLINE
gfs Ciss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK
VDS= 10 V; ID = 100 A, Note 1
Source-Drain Diode Symbol IS ISM VSD t rr Test Conditions VGS = 0 V Repetitive IF = IS, VGS = 0 V, Note 1 IF = 25 A, dI/dt = 100 A/s
Characteristic Values (TJ = 25C, unless otherwise specified) Min. typ. Max. 200 400 1.5 100 A A V
140 ns
Notes: 1. Pulse test, t 300 s, duty cycle d 2 %
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585
IXTR 200N10P
Fig. 1. Output Characteristics @ 25C
200 175 150 VGS = 10V 9V 350 VGS = 10V 300 250 8V 9V
Fig. 2. Extended Output Characteristics @ 25C
I D - Amperes
125 100 75 50 25 0 0 0.2 0.4 0.6 0.8 1
I D - Amperes
200 150
8V
7V
7V 100
6V
50 0
6V
1.2
1.4
1.6
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
V D S - Volts Fig. 3. Output Characteristics @ 150C
200 175 150 VGS = 10V 9V 8V 2.4 2.2 VGS = 10V
V D S - Volts Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature
R D S ( o n ) - Normalized
2 1.8 I D = 200A 1.6 1.4 1.2 1 0.8 0.6 I D = 100A
I D - Amperes
125 100 75 50 25 0 0 0.5 1 1.5 2 2.5 3 3.5 6V 7V
5V
-50
-25
0
25
50
75
100
125
150
175
V D S - Volts Fig. 5. RDS(on) Norm alized to 0.5 ID25 Value vs. Drain Current
2.4 2.2 80 TJ = 175 C 70
TJ - Degrees Centigrade Fig. 6. Drain Current vs. Case Tem perature
90
External Lead Current limit
R D S ( o n ) - Normalized
2 1.8 1.6 1.4 1.2 1 0.8 0.6 0 50 100 150 200 VGS = 15V
I D - Amperes
350
60 50 40 30 20
VGS = 10V
TJ = 25 C 250 300
10 0
I D - Amperes
-50
-25
0
25
50
75
100
125
150
175
TC - Degrees Centigrade
(c) 2005 IXYS All rights reserved
IXTR 200N10P
Fig. 7. Input Adm ittance
300 140 120 100 TJ = -40 C 80 60 40 20 0 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9 0 50 100 150 200 250 300 350 25C 150 C
Fig. 8. Transconductance
250
I D - Amperes
200
150 TJ = 150 C 25C 50 -40C
100
0
V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage
350 300 8 250 7 10 9 VDS = 50V I D = 100A I G = 10mA
g f s - Siemens
I D - Amperes Fig. 10. Gate Charge
I S - Amperes
VG S - Volts
TJ = 150 C TJ = 25C 0.4 0.6 0.8 1 1.2 1.4 1.6
200 150 100 50 0
6 5 4 3 2 1 0 0 25 50 75 100 125 150 175 200 225 250
V S D - Volts Fig. 11. Capacitance
1000 100,000 f = 1MHz
Q G - nanoCoulombs Fig. 12. Forw ard-Bias Safe Operating Area
TJ = 175C TC = 25 C
R DS(on) Limit
Capacitance - picoFarads
10,000
C iss
I D - Amperes
100s
C oss
100 1ms
1,000
C rss
10ms
DC 100 0 5 10 15 20 25 30 35 40 10 1 10 100 1000
V DS - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
V D S - Volts
IXTR 200N10P
Fig. 1 3 . M a x im um Tr a ns ie nt The r m a l Re s is ta nc e
1.00
R( t h ) J C - C / W
0.10
0.01 1 10 100 1000
Pu ls e W idth - millis ec on ds
(c) 2005 IXYS All rights reserved

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